mode field effect transistor asymmetric dual n-channel enhancement symbol max q2 unit s v ds v v gs v i dm t j , t stg c symbol v ds i fm t j , t stg gate-source voltage 12 30 absolute maximum ratings t a =25c unless otherwise noted parameter drain-source voltage w -55 to 150 -55 to 150 junction and storage temperature range 2 1.28 1.28 t a =25c t a =70c 2 a 6.4 40 30 7 6.8 t a =25c t a =70c power dissipation p d pulsed drain current b continuous drain current a i d maximum schottky max q1 30 20 8.5 units 30 v t a =25c parameter reverse voltage a 2.2 20 3 t a =70c pulsed diode forward current b continuous forward current a p d i f t a =25c t a =70c junction and storage temperature range power dissipation a w 1.28 -55 to 150 c 2 AO4912 features q1 q2 v ds (v) = 30v v ds (v) = 30v i d = 8.5a i d =7a (v gs = 10v) r ds(on) < 17m ? <26m ? (v gs = 10v) r ds(on) < 25m ? <31m ? (v gs = 4.5v) schottky v ds (v) = 30v, i f = 3a, v f <0.5v@1a the AO4912 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc-dc converters. a schottky diode is co-packaged in parallel with the synchronous mosfet to boost efficiency further standard product AO4912 is pb-free (meets rohs & sony 259 specifications). AO4912l is a green product ordering option. AO4912 and AO4912l are electrically identical. soic-8 g1 s1/ a d2 d2 d1/s2/k d1 / s2 /k d1/s2/k g2 1 2 3 4 8 7 6 5 g1 d1 s1 k a g2 d2 s2 q1 q2 general description www.freescale.net.cn 1 / 8
AO4912 symbol units r jl symbol units r jl r jl this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum junction-to-lead c steady-state 71 32 47.5 r ja 62.5 maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state 110 110 maximum junction-to-lead c steady-state 35 typ maximum junction-to-ambient a steady-state parameter: thermal characteristics mosfet q1 maximum junction-to-ambient a t 10s 40 thermal characteristics schottky 62.5 40 48 74 62.5 c/w maximum junction-to-ambient a steady-state max c/w c/w parameter: thermal characteristics mosfet q2 typ max maximum junction-to-ambient a t 10s r ja 48 74 110 maximum junction-to-lead c steady-state 35 40 a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4: aug 2005 www.freescale.net.cn 2 / 8
AO4912 symbol min typ max units bv dss 30 v 0.003 1 t j =55c 5 i gss 100 na v gs(th) 1 1.5 2 v i d(on) 25 a 20 26 t j =125c 31.6 38 24.3 31 m ? g fs 22 s v sd 0.78 1 v i s 3a c iss 590 710 pf c oss 162 pf c rss 40 pf r g 0.45 0.6 ? q g 6.04 7.3 nc q gs 1.46 nc q gd 2.56 nc t d(on) 3.7 5.5 ns t r 3.5 5.5 ns t d(off) 14.9 22 ns t f 2.5 4 ns t rr body diode reverse recovery time i f =7a, di/dt=100a/ s 21.2 26 ns q rr body diode reverse recovery charge i f =7a, di/dt=100a/ s 14.2 21 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =2.2 ? , r gen =3 ? v gs =4.5v, v ds =15v, i d =7.0a turn-on rise time turn-off delaytime turn-off fall time switching parameters total gate charge gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =7a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance r ds(on) static drain-source on-resistance v gs =10v, i d =7.0a m ? v gs =4.5v, i d =6.0a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v a gate-body leakage current v ds =0v, v gs = 12v drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v q2 electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4 : aug 2005 www.freescale.net.cn 3 / 8
AO4912 q2 typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2.5v 3.5v 3v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d (a) 16 18 20 22 24 26 28 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 125c 0.8 1 1.2 1.4 1.6 1.8 0 50 100 150 200 temperature (c) figure 4: on resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 70 246810 v gs (volts) figure 5: on resistance vs. gate-source voltage r ds(on) (m ? ) v ds =5v v gs =4.5v v gs =10v i d =7a 25c i d =7a 125c 25c 25c 125c www.freescale.net.cn 4 / 8
AO4912 q2 typical electrical and thermal characteristics 0 1 2 3 4 5 0123456 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (a) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limi ted 10 s v ds =15v i d =7a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v t j ( max ) =150c, t a =25c www.freescale.net.cn 5 / 8
AO4912 symbol min typ max units bv dss 30 v 0.007 0.05 3.2 10 12 20 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 30 a 13.8 17 t j =125c 20 24 19.7 25 m ? g fs 23 s v sd 0.45 0.5 v i s 3.5 a c iss 971 1165 pf c oss 190 pf c rss 110 pf r g 0.7 0.85 ? q g (10v) 19.2 23 nc q g 9.36 11.2 nc q gs 2.6 nc q gd 4.2 nc t d(on) 5.2 7.5 ns t r 4.4 6.5 ns t d(off) 17.3 25 ns t f 3.3 5 ns t rr body diode + schottky reverse recovery time i f =8.5a, di/dt=100a/ s 19.3 23 ns q rr body diode + schottky reverse recovery charge i f =8.5a, di/dt=100a/ s 9.4 11 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. q1 electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current. (set by schottky leakage) v r =30v v r =30v, t j =125c v r =30v, t j =150c ma gate-body leakage current v ds =0v, v gs = 20v m ? gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v r ds(on) static drain-source on-resistance v gs =10v, i d =8.5a v gs =4.5v, i d =7a maximum body-diode+schottky continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance (fet + schottky) forward transconductance v ds =5v, i d =8.5a diode+schottky forward voltage i s =1a turn-off fall time reverse transfer capacitance switching parameters total gate charge gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz v gs =10v, v ds =15v, i d =8.5a total gate charge turn-on rise time turn-off delaytime a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the schottky appears in parallel with the mosfet body diode, even though it is a separate chip. therefore, we provide the ne t forward drop, capacitance and recovery characteristics of the mosfet and schottky. however, the thermal resistance is specified for each chip separately. rev 4 : aug 2005 www.freescale.net.cn 6 / 8
AO4912 q1 typical electrical and thermal characteristics 1040 180 110 0.7 v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 10 14 18 22 26 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note f) i s (a) 125c fet+schottky 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 50 100 150 200 temperature (c) figure 4: on resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 246810 v gs (volts) figure 5: on resistance vs. gate-source voltage r ds(on) (m ? ) v ds =5v v gs =4.5v v gs =10v i d =8.5a 25c i d =8.5a 125c 25c 25c 125c www.freescale.net.cn 7 / 8
AO4912 q1 typical electrical and thermal characteristics 1040 180 110 0.7 v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (a) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited 10 s v ds =15v i d =8.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v t j ( max ) =150c, t a =25c www.freescale.net.cn 8 / 8
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